FQPF8N60C - High Performance MOSFET for Electronics Applications

Invest in Reliable and Efficient Electronics Components Today

FQPF8N60C is a MOSFET transistor that has been designed for high performance electronics applications. As an experienced seller in the electronics field, we are confident in recommending this component to customers who are seeking reliable and efficient electronics components. This MOSFET transistor delivers a low on-resistance and a fast switching capability that helps to increase the efficiency of electronic systems. It has a drain-source voltage of 600V and can handle a maximum power dissipation of 176W.

Moreover, it facilitates the use of smaller heatsinks and simplifies the thermal management of electronic designs. The FQPF8N60C is a cost-effective solution for power switching applications that require high performance and fast switching capability. With its sturdy construction and excellent electrical characteristics, it guarantees a reliable and efficient operation for your electronic system. Invest in the FQPF8N60C today and enjoy the benefits of a high-performance MOSFET transistor that is guaranteed to meet your electronics needs.

Trust us to provide you with the best electronics products that will enable you to build high-quality and long-lasting electronic systems.

Technical features:

• Technology: Si
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 600 V
• Id - Continuous Drain Current: 7.5 A
• Rds On - Drain-Source Resistance: 1.2 Ohms
• Vgs - Gate-Source Voltage: - 30 V, + 30 V
• Vgs th - Gate-Source Threshold Voltage: 4 V
• Qg - Gate Charge: 28 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Pd - Power Dissipation: 48 W
• Channel Mode: Enhancement
• Series: FQPF8N60C
• Packaging: Tube
• Brand: onsemi / Fairchild
• Configuration: Single
• Fall Time: 64.5 ns

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